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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA1186
DESCRIPTION With TO-3PN package High current capability Complement to type 2SC2837 APPLICATIONS Audio and general purpose applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -5 -10 -2 100 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-25mA ;IB=0 IC=-5A; IB=-0.5A VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-4V IE=0 ; VCB=-80V;f=1MHz IE=1A ; VCE=-12V 50 MIN -150
2SA1186
SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT
TYP.
MAX
UNIT V
-2.0 -0.1 -0.1
V mA mA
110 60
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A;RL=12| IB1=-IB2=-0.5A VCC=-60V 0.25 0.80 0.20 |I |I |I s s s
hFE Classifications O 50-100 P 70-140 Y 90-180
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1186
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1186
4


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